型号 IRFB9N65APBF
厂商 Vishay Siliconix
描述 MOSFET N-CH 650V 8.5A TO-220AB
IRFB9N65APBF PDF
代理商 IRFB9N65APBF
产品目录绘图 IR(F,L)x Series Side 1
IR(F,L)x Series Side 2
标准包装 1,000
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 650V
电流 - 连续漏极(Id) @ 25° C 8.5A
开态Rds(最大)@ Id, Vgs @ 25° C 930 毫欧 @ 5.1A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 48nC @ 10V
输入电容 (Ciss) @ Vds 1417pF @ 25V
功率 - 最大 167W
安装类型 通孔
封装/外壳 TO-220-3
供应商设备封装 TO-220AB
包装 管件
产品目录页面 1528 (CN2011-ZH PDF)
其它名称 *IRFB9N65APBF
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